Ion doping and ion beam modification
Since 1960s, a certain amount of boron, phosphorus or other elements of the ion into the semiconductor material, the formation of doping. The depth of doping can be controlled by changing the energy of the ions. The doping concentration can be controlled by the intensity of the ion current. The repeatability and reliability of ion implantation method are better than that of diffusion method. Ion implantation has become an important link in the production of large-scale semiconductor integrated circuits. It has become an inevitable trend to replace the old diffusion process with ion implantation in some devices.
The results obtained in the modification of metal materials by ion implantation are very attractive. It can improve the hardness, corrosion resistance and fatigue strength of metal, and reduce the wear rate of metal. Some insulating materials, such as pottery, glass and organic materials, are irradiated by ion beams, and the properties of the insulating materials are changed.
Ion beam irradiation and doping process is a non thermal equilibrium process, so this method can be used in general metallurgical and chemical methods can not get new materials. Low energy (50~400keV) for small accelerator ion implantation ion implantation machine ", has become a kind of special equipment, the size of a high voltage electron microscope or oscilloscope, use and maintenance are very convenient. In the study of diamond materials, high-temperature superconducting materials, magnetic materials, photosensitive materials, has been widely used in ion beam, a new metallurgy -- "ion implantation metallurgy" is formed.
Ion beam analysis
The interaction between ions and substances with certain energy causes the emission electron, photon, X ray, may also occur in elastic scattering and inelastic scattering and nuclear reactions, rebound ion and recoil, gamma rays, and Triton, hydrogen nuclei particles such as nuclear reaction products, can provide the material component the structure and status information. Using this information to analyze the sample called ion beam analysis. In the method of ion beam analysis, the analysis method of X ray fluorescence analysis, nuclear reaction analysis and channel effect (see channel effect and blocking effect) combined with other analysis is more mature. In addition, low energy ion beam can also be used for surface composition analysis, such as ion scattering spectroscopy (ZSS), secondary ion mass spectrometry (SZMS) and so on. Ultra sensitive mass spectrometry (accelerator mass spectrometry), charged particle activation analysis, ion excitation spectroscopy, ion induced Auger electron spectroscopy are developing. MV accelerator has been used for ion beam analysis.